PART |
Description |
Maker |
2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN |
Bipolar Transistor Bipolar Transistor Adoption of FBET, MBIT processes Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
2SC3117 2SA1249 2SC3117T 2SC3117S |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 160V五(巴西)总裁| 1.5AI(丙)|26 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-126 160V/1.5A Switching Applications
|
Sanyo Semicon Device
|
2SB127509 2SB1275 |
Power Transistor (-160V, -1.5A)
|
Rohm
|
2SD191810 |
Power Transistor (160V , 1.5A)
|
Rohm
|
STRS6707 STR-S6707 STR-S6708 STR-S6709 TRS6707 STR |
OFF-LINE SWITCHING REGULATORS - WITH BIPOLAR SWITCHING TRANSISTOR OFF-LINE SWITCHING REGULATORS WITH BIPOLAR SWITCHING TRANSISTOR OFF-LINE SWITCHING REGULATORS WITH BIPOLAR SWITCHING TRANSISTOR Off-Line Switching Regulator With Bipolar Switching Transistor(峰值输出电5A,输出功率直20W50V输出,带双极开关晶体管的脱线开关稳压器) Off-Line Switching Regulator With Bipolar Switching Transistor(峰值输出电2A,输出功率直20W50V输出,带双极开关晶体管的脱线开关稳压器) RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
|
ALLEGRO[Allegro MicroSystems] Allegro MicroSystems, Inc.
|
TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC Analog IC 模拟IC
|
Bourns, Inc.
|
2SA1768 2SC4612 2SC4612R 2SC4612T |
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SPAK High-Voltage Switching Applications
|
SANYO[Sanyo Semicon Device]
|
151-05 151-08 151-07 151-09 152-05 164-18 164-04 1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 6A I(C) | TO-82 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 6A I(C) | TO-82 晶体管|晶体管|叩| 100V的五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管|叩| 180V五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管| npn型| 140伏特五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管|叩| 50V五(巴西)总裁| 6A条一c)|2 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 100V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 60V的五(巴西)总裁|甲一c)| STR-5/16 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 50V五(巴西)总裁|甲一(c)| STR-5/16 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 70V的五(巴西)总裁|甲一(c)| STR-5/16
|
Samsung Semiconductor Co., Ltd. Molex, Inc. Intel, Corp.
|
CSD669AB |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 120 hFE.
|
Continental Device India Limited
|
MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
|
ON Semiconductor
|
CSC2238Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSA968Y
|
Continental Device India Limited
|